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Surface photovoltage in CdMnTePLACZEK-POPKO, E; SZARO, L.Solid-state electronics. 1992, Vol 35, Num 10, pp 1451-1454, issn 0038-1101Article

Dark current in far-infrared Hg_(1-x-y)Cd_xMn_yTe detectorsPLACZEK-POPKO, E; JEDRAL, L.Infrared physics. 1988, Vol 28, Num 4, pp 249-253, issn 0020-0891Article

Resonant tunneling in Cd_xHg_1-xTe p-n junctionsPŁACZEK-POPKO, E; BECLA, P.Acta physica Polonica. A. 1988, Vol 73, Num 3, pp 487-490, issn 0587-4246Article

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Metastable defect characterization in Cd_0.9Mn_0.1Te:InPLACZEK-POPKO, E; BECLA, P.Physica. B, Condensed matter. 2001, Vol 308-10, pp 954-957, issn 0921-4526Conference Paper

FERMI LEVEL IN CD_XHG_1-XTE².SIERANSKI K; SZATKOWSKI J; PAWLIKOWSKI JM et al.1977; PHYS. STATUS SOLIDI, B; ALLEM.; DA. 1977; VOL. 81; NO 1; PP. K67-K70; BIBL. 8 REF.Article

Deep-level transient spectroscopy study of hole traps in p-type CdTeSZATKOWSKI, J; PLACZEK-POPKO, E; HAJDUSIANEK, A et al.Journal of physics. Condensed matter (Print). 1994, Vol 6, Num 39, pp 7935-7940, issn 0953-8984Article

Correlation between barrier inhomogeneities of 4H-SiC 1 A/600 V Schottky rectifiers and deep-level defects revealed by DLTS and Laplace DLTSGELCZUK, Ł; KAMYCZEK, P; PŁACZEK-POPKO, E et al.Solid-state electronics. 2014, Vol 99, pp 1-6, issn 0038-1101, 6 p.Article

Properties of the relaxation time distribution underlying the Kohlrausch-Williams-Watts photoionization of the DX centers in Cd_1-xMn_x Te mixed crystalsTRZMIEL, J; WERON, K; JANCZURA, J et al.Journal of physics. Condensed matter (Print). 2009, Vol 21, Num 34, issn 0953-8984, 345801.1-345801.8Article

Dark current in GaAs_1-xSb_x p⁺-i-n junctionsRADOJEWSKA, E. B; PŁACZEK-POPKO, E; KASPRZAK, J. F et al.Acta physica Polonica. A. 1989, Vol 75, Num 2, pp 343-345, issn 0587-4246, 3 p.Article

Oscillations of the photovoltaic effect in HgCdMnTe in a quantizing magnetic fieldDUDZIAK, E; JEDRAL, L. Z; PLACZEK-POPKO, E et al.Acta physica Polonica. A. 1990, Vol 77, Num 1, pp 171-174, issn 0587-4246Article

On the relaxation rate distribution of the photoionized DX centers in indium doped Cd_1―xMn_xTeTRZMIEL, J; PLACZEK-POPKO, E; GUMIENNY, Z et al.Journal of physics. Condensed matter (Print). 2009, Vol 21, Num 21, issn 0953-8984, 215803.1-215803.5Article

Stretched-exponential photoionization of the DX-related centers in indium-and gallium-doped Cd_1-xMn_xTe alloysTRZMIEL, J; PLACZEK-POPKO, E; WROBEL, J. M et al.Journal of physics. Condensed matter (Print). 2008, Vol 20, Num 33, issn 0953-8984, 335218.1-335218.4Article

Photoionization kinetics of the DX related center in In-doped Cd_1-xMn_xTePLACZEK-POPKO, E; SZATKOWSKI, J; DUDA, J et al.Physica status solidi. A. Applied research. 2004, Vol 201, Num 3, pp 517-521, issn 0031-8965, 5 p.Article

Electrical properties of HgCdMnTe P-N junctionsPLACZEK-POPKO, E; DUDZIAK, E; JEDRAL, L et al.Infrared physics. 1989, Vol 29, Num 5, pp 903-905, issn 0020-0891, 3 p.Article

Deep level defects in proton irradiated p-type Al0.5Ga0.5AsSZATKOWSKI, J; SIERANSKI, K; PLACZEK-POPKO, E et al.Physica. B, Condensed matter. 2009, Vol 404, Num 23-24, pp 4967-4969, issn 0921-4526, 3 p.Conference Paper

Zn₃P₂ ― a new material for optoelectronic devicesMISIEWICZ, J; BRYJA, L; JEZIERSKI, K et al.Microelectronics journal. 1994, Vol 25, Num 5, pp XXIII-XXVIII, issn 0959-8324Article

On the stretched-exponential decay kinetics of the ionized DX centers in gallium doped Cd1―xMnxTeTRZMIEL, J; PLACZEK-POPKO, E; NOWAK, A et al.Physica. B, Condensed matter. 2009, Vol 404, Num 23-24, pp 5251-5254, issn 0921-4526, 4 p.Conference Paper

Electro-optical characterization of ZnO/ZnMgO structure grown on p-type Si (111) by PA-MBE methodPIETRZYK, M. A; ZIELONY, E; STACHOWICZ, M et al.Journal of alloys and compounds. 2014, Vol 587, pp 724-728, issn 0925-8388, 5 p.Article

Beryllium doping in Al_0.5Ga_0.5As MBE layersSZATKOWSKI, J; PŁACZEK-POPKO, E; SIERANSKI, K et al.SPIE proceedings series. 1999, pp 76-80, isbn 0-8194-3199-0Conference Paper

Photoionization of DX-related traps in indium- and gallium-doped Cd_1-xMn_xTePŁACZEK-POPKO, E; SZATKOWSKI, J; BECLA, P et al.Physica. B, Condensed matter. 2003, Vol 340-42, pp 886-889, issn 0921-4526, 4 p.Conference Paper

Deep level transient spectroscopy signatures of majority traps in GaN p―n diodes grown by metal-organic vapor-phase epitaxy technique on GaN substratesPLACZEK-POPKO, E; TRZMIEL, J; ZIELONY, E et al.Physica. B, Condensed matter. 2009, Vol 404, Num 23-24, pp 4889-4891, issn 0921-4526, 3 p.Conference Paper

Photovoltaic and photoelectrical response of n-ZnO/p-Si heterostructures with ZnO films grown by an Atomic Layer Deposition methodPIETRUSZKA, R; LUKA, G; KOPALKO, K et al.Materials science in semiconductor processing. 2014, Vol 25, pp 190-196, issn 1369-8001, 7 p.Article

Deep electron states in gallium-doped CdMeTe mixed crystalsSZATKOWSKI, J; PŁACZEK-POPKO, E; HAJDUSIANEK, A et al.Journal of crystal growth. 1996, Vol 161, Num 1-4, pp 282-285, issn 0022-0248Conference Paper